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Silicon Carbide

Silicon Carbide

Silicon Carbide

Silicon carbide (SiC) is a compound composed of silicon (Si) and carbon (C) and is a wide bandgap semiconductor material. It has key properties such as high hardness, high thermal conductivity, high melting point and stable chemical properties.

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Features

Applications

Silicon carbide (SiC) is a multifunctional material with high hardness, high thermal conductivity, and certain electrical and thermal conductivity. The following are the main application of silicon carbide:

 

1、Abrasives and grinding tools: sandblasting, polishing, it can be used to make grinding wheels, oil stones, grinding heads, sand tiles and other grinding tools.

 

2、Refractory materials: Carbon is widely used to make refractory materials, such as grinding tools, slabs and saggers used in kilns for firing ceramic products, silicon carbide bricks for vertical cylinder distillation furnaces in zinc smelting industry, aluminum electrolytic cell linings, crucibles, small furnace materials, etc.

 

3、Metallurgical raw materials: In the metallurgical industry, silicon carbide can be used as a deoxidizer for steelmaking and a modifier for cast iron structure.

 

4、Electrical uses: Silicon carbide can be used as a heating element, nonlinear resistor element and high semiconductor material.

 

5、Other uses: Silicon carbide can also be used to make high-performance ceramics, such as bulletproof ceramic plates;and use make high-temperature structural materials, such as nozzles, combustion chambers, etc.; used to make infrared radiation coatings and far-infrared radiation dryers, etc.

 

 

Grit No.

P series:  P12–P2500

F series:  F12–F1200

Refractory & Deoxidizer Series :  0-1,0-10,1-3,1-5,1-10 mm

Other series:  Japanese standard “12-“6000

                         American standard12″-1200*

 

Specification:

Abrasives Grit Size Chemical Composition(%)
SIC(min) F.C(max) Fe2O3(max)
silicon carbide F12~F90 98.5 0.20 0.60
F100~F150 98.5 0.30 0.80
F180~F220 97.0 0.30 1.20
Refractory materials 0-1,0-10,1-3,1-10mm 88-90 0.30 0.80  
 
200mesh,325mesh 98.0 0.30 1.50  

 

Parameters

Silicon carbide (SiC) is a compound composed of silicon (Si) and carbon (C) and is a wide bandgap semiconductor material. It has key properties such as high hardness, high thermal conductivity, high melting point and stable chemical properties.

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